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  inchange semiconductor product specification silicon npn power transistors MJE15030 description ? ? with to-220c package ? complement to type mje15031 ? high transition frequency ? dc current gain specified to 4.0 amperes h fe = 40 (min) @ i c = 3.0 adc h fe = 20 (min) @ i c = 4.0 adc applications ? designed for use as high?frequency drivers in audio amplifiers . pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 8 a i cm collector current-peak 16 a i b base current 2 a t a =25 ?? 2 p d total power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance ; junction to case 2.5 ??/w r th j-a thermal resistance , junction to ambient 62.5 ??/w
inchange semiconductor product specification 2 silicon npn power transistors MJE15030 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma; i b =0 150 v v cesat collector-emitter saturation voltage i c =1a ;i b =0.1a 0.5 v v be base-emitter on voltage i c =1a ; v ce =2v 1.0 v i cbo collector cut-off current v cb =150v; i e =0 10 | a i ceo collector cut-off current v ce =150v; i b =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =0.1a ; v ce =2v 40 h fe-2 dc current gain i c =2a ; v ce =2v 40 h fe-3 dc current gain i c =3a ; v ce =2v 40 h fe-4 dc current gain i c =4a ; v ce =2v 20 f t transition frequency i c =0.5a;v ce =10v;f=10mhz 30 mhz
inchange semiconductor product specification 3 silicon npn power transistors MJE15030 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm)
inchange semiconductor product specification 4 silicon npn power transistors MJE15030


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